SI8805EDB-T2-E1 Vishay/Siliconix, SI8805EDB-T2-E1 Datasheet

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SI8805EDB-T2-E1

Manufacturer Part Number
SI8805EDB-T2-E1
Description
MOSFET 8V P-CH Micro Foot
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI8805EDB-T2-E1

Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 8 V
Gate-source Breakdown Voltage
5 V
Continuous Drain Current
- 3.1 A
Resistance Drain-source Rds (on)
0.056 Ohms
Configuration
Single
Mounting Style
SMD/SMT
Package / Case
Micro Foot-4
Forward Transconductance Gfs (max / Min)
8 S
Gate Charge Qg
6.7 nC
Power Dissipation
0.9 W
Ordering Information: Si8805EDB-T2-E1 (Lead (Pb)-free and Halogen-free)
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
Document Number: 67935
S12-1620-Rev. B, 09-Jul-12
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
V
DS
- 8
Device Marking: xxx = Date/Lot Traceability Code
(V)
Bump Side View
S
S
2
3
0.068 at V
0.088 at V
0.155 at V
0.290 at V
G
D
R
MICRO FOOT
AC
DS(on)
1
4
GS
GS
GS
GS
J
= - 4.5 V
= - 2.5 V
= - 1.5 V
= - 1.2 V
()
= 150 °C)
a, d
b, e
Backside View
For technical questions, contact:
P-Channel 8 V (D-S) MOSFET
I
D
- 3.1
- 2.7
- 2.1
- 0.5
(A)
This document is subject to change without notice.
a
c
T
T
T
T
T
T
T
T
T
T
A
A
A
A
A
A
A
A
A
A
A
t  5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Q
= 25 °C, unless otherwise noted)
6.7 nC
g
(Typ.)
New Product
Symbol
T
J
pmostechsupport@vishay.com
V
V
I
Symbol
P
, T
DM
I
I
DS
GS
D
S
R
D
FEATURES
APPLICATIONS
stg
thJA
• TrenchFET
• Ultra Small 0.8 mm x 0.8 mm Outline
• Ultra Thin 0.357 mm Height
• Typical ESD Protection 1500 V HBM
• Material categorization:
• Portable Devices such as Cell Phones,
For definitions of compliance please see
www.vishay.com/doc?99912
Smart Phones, Tablet PCs and Media Players
- Load Switch for Low Voltage Gate Drive
- Load Switch for 1.2 V Power Line
Typical
®
105
200
Power MOSFET
- 55 to 150
P-Channel MOSFET
Limit
- 3.1
- 2.5
- 2.2
- 1.8
- 0.7
- 0.4
0.9
0.6
0.5
0.3
- 15
260
± 5
- 8
G
a
a
b
b
a
a
b
b
a
b
Maximum
135
260
Vishay Siliconix
www.vishay.com/doc?91000
Si8805EDB
S
D
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI8805EDB-T2-E1

SI8805EDB-T2-E1 Summary of contents

Page 1

... Backside View Device Marking: xxx = Date/Lot Traceability Code AC Ordering Information: Si8805EDB-T2-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation ...

Page 2

... Si8805EDB Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Total Gate Charge ...

Page 3

... 1000 800 600 400 = 2.5 V 200 = 4 pmostechsupport@vishay.com This document is subject to change without notice. Si8805EDB Vishay Siliconix = 150 ° ° Gate-to-Source Voltage ( ° 125 ° ° ...

Page 4

... Si8805EDB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted 1 6 Total Gate Charge (nC) g Gate Charge 1 1 0 1 0.9 0.8 0 ...

Page 5

... Safe Operating Area, Junction-to-Ambient 0.8 0.6 0.4 0.2 0 125 150 25 = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper pmostechsupport@vishay.com This document is subject to change without notice. Si8805EDB Vishay Siliconix 100 50 75 100 125 150 T - Ambient Temperature (°C) A Power Derating www.vishay.com www ...

Page 6

... Si8805EDB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with maximum copper) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper) www ...

Page 7

... This document is subject to change without notice. Si8805EDB Vishay Siliconix Inches Nom. Max. 0.0141 0.0157 0.0062 0.0074 0.0079 0.0084 0.0068 0.0072 0.0157 0.0078 ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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