SI8805EDB-T2-E1 Vishay/Siliconix, SI8805EDB-T2-E1 Datasheet - Page 3

• Manufacturer Part Number: SI8805EDB-T2-E1
• Description: MOSFET 8V P-CH Micro Foot
• Manufacturer: Vishay/Siliconix

Specifications of SI8805EDB-T2-E1

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: 5 V
• Continuous Drain Current: - 3.1 A
• Resistance Drain-source Rds (on): 0.056 Ohms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: Micro Foot-4
• Forward Transconductance Gfs (max / Min): 8 S
• Gate Charge Qg: 6.7 nC
• Power Dissipation: 0.9 W

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 67935
S12-1620-Rev. B, 09-Jul-12
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.30
0.25
0.20
0.15
0.10
0.05
3.0
2.5
2.0
1.5
1.0
0.5
15
12
0
0
9
6
3
0
0
0
0
Gate Current vs. Gate-Source Voltage
V
GS
On-Resistance vs. Drain Current
0.5
= 1.2 V
3
3
V
V
Output Characteristics
DS
GS
- Drain-to-Source Voltage (V)
- Gate-Source Voltage (V)
V
I
1
GS
D
- Drain Current (A)
= 1.5 V
6
6
1.5
V
GS
V
= 5 V thru 2.5 V
GS
9
9
For technical questions, contact:
T
= 1.8 V
J
= 25 °C
2
V
V
GS
V
GS
V
V
GS
GS
= 2.5 V
GS
= 4.5 V
12
12
= 1 V
= 1.5 V
2.5
= 2 V
This document is subject to change without notice.
15
15
3
New Product
[e-mail]
1000
10
10
10
10
10
10
10
10
10
800
600
400
200
15
12
-2
-3
-4
-5
-6
-7
-8
-9
-10
9
6
3
0
0
0
0
0
Gate Current vs. Gate-Source Voltage
T
C
C
= 125 °C
0.5
rss
3
V
V
V
Transfer Characteristics
GS
DS
GS
2
T
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
C
= 25 °C
oss
T
Capacitance
J
6
1
= 150 °C
C
iss
4
T
C
= - 55 °C
1.5
9
Vishay Siliconix
T
J
www.vishay.com/doc?91000
= 25 °C
Si8805EDB
6
12
2
www.vishay.com
2.5
15
8
3