SI8805EDB-T2-E1 Vishay/Siliconix, SI8805EDB-T2-E1 Datasheet - Page 6

• Manufacturer Part Number: SI8805EDB-T2-E1
• Description: MOSFET 8V P-CH Micro Foot
• Manufacturer: Vishay/Siliconix

Specifications of SI8805EDB-T2-E1

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: 5 V
• Continuous Drain Current: - 3.1 A
• Resistance Drain-source Rds (on): 0.056 Ohms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: Micro Foot-4
• Forward Transconductance Gfs (max / Min): 8 S
• Gate Charge Qg: 6.7 nC
• Power Dissipation: 0.9 W

Si8805EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
6
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
0.01
0.1
0.1
1
10
1
10
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with maximum copper)
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper)
0.05
-4
0.1
0.02
0.2
0.02
-4
0.05
Duty Cycle = 0.5
Duty Cycle = 0.5
0.2
0.1
Single Pulse
Single Pulse
10
10
-3
-3
For technical questions, contact:
10
10
-2
-2
This document is subject to change without notice.
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
New Product
10
10
-1
-1
[e-mail]
1
1
10
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
P
DM
DM
JM
JM
- T
- T
t
t
A
1
A
1
= P
= P
t
t
2
2
DM
DM
100
100
Z
Z
thJA
thJA
thJA
thJA
t
t
t
t
S12-1620-Rev. B, 09-Jul-12
1
2
1
2
(t)
(t)
Document Number: 67935
= 185 °C/W
= 330 °C/W
www.vishay.com/doc?91000
1000
1000