SI8805EDB-T2-E1 Vishay/Siliconix, SI8805EDB-T2-E1 Datasheet - Page 2

• Manufacturer Part Number: SI8805EDB-T2-E1
• Description: MOSFET 8V P-CH Micro Foot
• Manufacturer: Vishay/Siliconix

Specifications of SI8805EDB-T2-E1

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: 5 V
• Continuous Drain Current: - 3.1 A
• Resistance Drain-source Rds (on): 0.056 Ohms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: Micro Foot-4
• Forward Transconductance Gfs (max / Min): 8 S
• Gate Charge Qg: 6.7 nC
• Power Dissipation: 0.9 W

Si8805EDB
Vishay Siliconix
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SPECIFICATIONS (T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
GS(th)
DS
Temperature Coefficient
Temperature Coefficient
b
a
a
J
= 25 °C, unless otherwise noted)
a
For technical questions, contact:
V
Symbol
V
This document is subject to change without notice.
R
V
GS(th)
I
t
t
I
I
V
GS(th)
D(on)
DS(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
I
DS
Q
Q
g
R
SM
I
t
t
t
DS
t
t
SD
S
rr
gd
a
b
fs
gs
r
f
g
g
rr
/T
/T
J
J
New Product
V
I
D
DS
V
 - 1.5 A, V
DS
= - 4 V, V
dI/dt = 100 A/µs, T
V
V
V
V
V
V
= - 8 V, V
V
V
V
V
DS
V
DS
I
GS
GS
GS
GS
GS
S
DS
DD
DS
DS
[e-mail]
= - 1.5 A, V
Test Conditions
= V
- 4 V, V
- 4.5 V, I
- 2.5 V, I
- 1.5 V, I
- 1.2 V, I
= 0 V, I
= - 4 V, I
= 0 V, V
= - 4 V, R
I
= - 8 V, V
D
I
T
F
GS
f = 1 MHz
GS
GEN
C
= - 250 µA
= - 1.5 A,
GS
= 25 °C
= - 4.5 V, I
, I
D
= - 4.5 V, R
= 0 V, T
D
GS
GS
D
= - 250 µA
D
D
D
D
= - 250 µA
L
GS
GS
= - 1.5 A
= - 1.5 A
= - 1.5 A
= - 0.5 A
= - 0.3 A
= ± 5 V
= - 4.5 V
= 2.7 
J
= 0 V
0 V
= 25 °C
J
D
= 55 °C
= - 1.5 A
g
= 1 
- 0.35
Min.
- 8
- 5
0.056
0.070
0.115
0.190
S12-1620-Rev. B, 09-Jul-12
Typ.
- 0.8
2.1
6.7
0.7
1.8
- 4
10
13
13
25
17
35
15
15
20
Document Number: 67935
8
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0.068
0.088
0.155
0.290
Max.
± 1.5
- 0.7
- 0.7
- 1.2
- 10
- 15
- 1
10
25
25
50
35
70
30
mV/°C
Unit
µA
nC
nC
ns
ns
ns


V
V
A
S
A
V