NX3008NBKS,115 NXP Semiconductors, NX3008NBKS,115 Datasheet

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NX3008NBKS,115

Manufacturer Part Number
NX3008NBKS,115
Description
MOSFET 30V 350 MA DUAL N-CH TRENCH MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of NX3008NBKS,115

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
350 mA
Resistance Drain-source Rds (on)
1.4 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363
Minimum Operating Temperature
- 55 C
Power Dissipation
990 mW
Factory Pack Quantity
3000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
Table 1.
[1]
Symbol
I
Per transistor
V
V
Static characteristics (per transistor)
R
D
DS
GS
DSon
NX3008NBKS
30 V, 350 mA dual N-channel Trench MOSFET
Rev. 1 — 1 August 2011
Very fast switching
Low threshold voltage
Trench MOSFET technology
Relay driver
High-speed line driver
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm
Quick reference data
2
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
.
Conditions
T
V
V
T
j
j
GS
GS
= 25 °C
= 25 °C
= 4.5 V; T
= 4.5 V; I
D
amb
= 350 mA;
ESD protection up to 2 kV
AEC-Q101 qualified
Low-side loadswitch
Switching circuits
= 25 °C
[1]
Min
-
-
-
-8
Product data sheet
Typ
-
-
-
1
Max
30
8
350
1.4
Unit
V
V
mA

Related parts for NX3008NBKS,115

NX3008NBKS,115 Summary of contents

Page 1

NX3008NBKS 30 V, 350 mA dual N-channel Trench MOSFET Rev. 1 — 1 August 2011 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 3. Ordering information Table 3. Ordering information Type number Package Name NX3008NBKS SC-88 4. Marking Table 4. Marking codes ...

Page 3

... NXP Semiconductors 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Per transistor V drain-source voltage DS V gate-source voltage GS I drain current D I peak drain current DM P total power dissipation tot Per device P total power dissipation ...

Page 4

... NXP Semiconductors 120 P der (%) -75 -25 25 Fig 1. Normalized total power dissipation as a function of junction temperature ( single pulse (3) DC ° 100 ms p (5) DC ° amb Fig 3. Safe operating area ...

Page 5

... NXP Semiconductors 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Per transistor R thermal resistance from junction to ambient th(j-a) R thermal resistance from junction to solder point th(j-sp) Per device R thermal resistance from junction to ambient th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm ...

Page 6

... NXP Semiconductors 3 10 duty cycle = 1 Z th(j-a) (K/W) 0.75 0.5 0. 0.25 0.2 0.1 0.05 0. −3 − FR4 PCB, mounting pad for drain 1 cm Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX3008NBKS Product data sheet 30 V, 350 mA dual N-channel Trench MOSFET − ...

Page 7

... NXP Semiconductors 7. Characteristics Table 7. Characteristics Symbol Parameter Static characteristics (per transistor) V drain-source (BR)DSS breakdown voltage V gate-source threshold GSth voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance g forward fs transconductance Dynamic characteristics (per transistor) Q total gate charge G(tot) ...

Page 8

... NXP Semiconductors 0.4 4 2.5 V (A) 0.3 0.2 0.1 0 °C j Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 6 R (on) DS (Ω) (1) ( 0.0 0.1 0 ° Fig 8. Drain-source on-state resistance as a function of drain current ...

Page 9

... NXP Semiconductors 0 (A) 0.3 0.2 0.1 0 > DSon ( ° 150 °C j Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 1.5 V GS(th) (V) (1) 1.0 (2) 0.5 (3) 0.0 - 0.25 mA (1) maximum values (2) typical values (3) minimum values Fig 12. Gate-source threshold voltage as a function of ...

Page 10

... NXP Semiconductors ( 0.0 0 350 mA Fig 14. Gate-source voltage as a function of gate charge; typical values ( 150 ° °C j Fig 16. Source current as a function of source-drain voltage; typical values NX3008NBKS Product data sheet 001aao275 0 ...

Page 11

... NXP Semiconductors 8. Test information Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. NX3008NBKS Product data sheet 30 V, 350 mA dual N-channel Trench MOSFET ...

Page 12

... NXP Semiconductors 9. Package outline Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 Fig 18. Package outline SOT363 (SC-88) NX3008NBKS Product data sheet scale ...

Page 13

... NXP Semiconductors 10. Soldering 1.5 2.35 0.6 (4×) Fig 19. Reflow soldering footprint for SOT363 (SC-88) 4.5 1.3 Fig 20. Wave soldering footprint for SOT363 (SC-88) NX3008NBKS Product data sheet 2.65 0.4 (2×) 0.5 (4×) 0.5 0.6 (4×) (2×) 0.6 (4×) 1.8 1.5 0.3 1.5 1.3 2.45 5.3 All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008NBKS 30 V, 350 mA dual N-channel Trench MOSFET ...

Page 14

... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date NX3008NBKS v.1 20110801 NX3008NBKS Product data sheet 30 V, 350 mA dual N-channel Trench MOSFET Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 ...

Page 15

... NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ...

Page 16

... In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. ...

Page 17

... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .5 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 11 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 11 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 11 Revision history ...

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