NX3008NBKS,115 NXP Semiconductors, NX3008NBKS,115 Datasheet - Page 10

• Manufacturer Part Number: NX3008NBKS,115
• Description: MOSFET 30V 350 MA DUAL N-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008NBKS,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 350 mA
• Resistance Drain-source Rds (on): 1.4 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 990 mW
• Factory Pack Quantity: 3000

NXP Semiconductors
NX3008NBKS
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
GS
5
4
3
2
1
0
0.0
charge; typical values
I
V
(1) T
(2) T
D
GS
= 350 mA; V
= 0 V
j
j
= 150 °C
= 25 °C
0.2
DS
= 15 V; T
0.4
(A)
amb
I
S
0.4
0.3
0.2
0.1
0.0
0.0
= 25 °C
Q
All information provided in this document is subject to legal disclaimers.
G
001aao275
(nC)
0.6
Rev. 1 — 1 August 2011
0.4
(1)
Fig 15. Gate charge waveform definitions
0.6
30 V, 350 mA dual N-channel Trench MOSFET
(2)
V
V
SD
V
V
V
GS(pl)
001aao276
DS
GS(th)
GS
(V)
1.2
Q
GS1
I
Q
D
GS
Q
GS2
NX3008NBKS
Q
G(tot)
Q
GD
© NXP B.V. 2011. All rights reserved.
003aaa508
10 of 17