NX3008NBKS,115 NXP Semiconductors, NX3008NBKS,115 Datasheet - Page 4

• Manufacturer Part Number: NX3008NBKS,115
• Description: MOSFET 30V 350 MA DUAL N-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008NBKS,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 350 mA
• Resistance Drain-source Rds (on): 1.4 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 990 mW
• Factory Pack Quantity: 3000

NXP Semiconductors
NX3008NBKS
Product data sheet
Fig 1.
Fig 3.
P
(%)
der
120
80
40
0
-75
function of junction temperature
voltage
Normalized total power dissipation as a
I
(1) t
(2) t
(3) DC; T
(4) t
(5) DC; T
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
DM
is a single pulse
p
p
p
= 1 ms
= 10 ms
= 100 ms
-25
sp
amb
(A)
l
D
10
10
= 25 °C
10
= 25 °C; 1 cm
-1
-2
1
10
25
-1
75
2
drain mounting pad
125
All information provided in this document is subject to legal disclaimers.
001aao121
T
j
(°C)
1
175
Rev. 1 — 1 August 2011
Fig 2.
(%)
I
der
120
30 V, 350 mA dual N-channel Trench MOSFET
80
40
0
-75
function of junction temperature
Normalized continuous drain current as a
10
-25
V
DS
(1)
(2)
(3)
(4)
(5)
(V)
25
001aao251
NX3008NBKS
75
10
2
125
© NXP B.V. 2011. All rights reserved.
001aao122
T
j
(°C)
175
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