BSS126 H6906 Infineon Technologies, BSS126 H6906 Datasheet - Page 3

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BSS126 H6906

Manufacturer Part Number
BSS126 H6906
Description
MOSFET N-KANAL SMALL SIGNAL MOS
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSS126 H6906

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.021 A
Resistance Drain-source Rds (on)
700 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PG-SOT23-3
Fall Time
115 ns
Forward Transconductance Gfs (max / Min)
0.017 S
Gate Charge Qg
1.4 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
0.5 W
Rise Time
9.7 ns
Typical Turn-off Delay Time
14 ns
Part # Aliases
BSS126H6906XT BSS126H6906XTSA1 SP000705716
Rev. 2.1
Rev. 2.1
Parameter
Dynamic characteristics
I
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
D
=f(V
GS
); V
DS
=3 V; T
j
=25 °C
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
V
I
V
I
V
T
V
T
V
di
D
D
A
j
GS
DD
GS
DD
GS
GS
R
=0.01 A, R
=10 mA,
=25 °C
F
page 3
page 3
=25 °C
=300 V, I
/dt =100 A/µs
=-5 V, V
=300 V,
=-3…7 V,
=400 V,
=-3 to 5 V
=-5 V, I
F
F
DS
=16 mA,
G
=0.01 A,
=6 Ω
=25 V,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.05
0.10
0.81
13.2
typ.
115
160
2.4
1.0
6.1
9.7
1.2
1.4
21
14
-
-
0.016 A
0.064
max.
14.5
0.08
19.8
170
240
3.2
1.5
9.2
1.8
2.1
1.2
28
21
-
BSS126
2012-03-14
2012-03-14
Unit
pF
ns
nC
V
V
ns
nC

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