BSS126 H6906 Infineon Technologies, BSS126 H6906 Datasheet - Page 4

• Manufacturer Part Number: BSS126 H6906
• Description: MOSFET N-KANAL SMALL SIGNAL MOS
• Manufacturer: Infineon Technologies

Specifications of BSS126 H6906

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.021 A
• Resistance Drain-source Rds (on): 700 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT23-3
• Fall Time: 115 ns
• Forward Transconductance Gfs (max / Min): 0.017 S
• Gate Charge Qg: 1.4 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.5 W
• Rise Time: 9.7 ns
• Typical Turn-off Delay Time: 14 ns
• Part # Aliases: BSS126H6906XT BSS126H6906XTSA1 SP000705716

Rev. 2.1
Rev. 2.1
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
10
0.6
0.6
0.5
0.5
0.4
0.4
0.3
0.3
0.2
0.2
0.1
0.1
GS
-1
-2
-3
-4
0
0
A
10
); V
)
0
0
limited by on-state
resistance
0
p
DS
=3 V; T
40
40
10
j
=25 °C
1
V
T
T
A
A
DS
80
80
[°C]
[°C]
[V]
10
2
120
120
100 µs
10 ms
DC
10 µs
1 ms
160
160
10
page 4
page 4
3
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
0.025
0.025
0.015
0.015
0.005
0.005
0.02
0.02
0.01
0.01
=f(t
10
10
10
A
0
0
3
2
1
); V
10
p
0
0
)
-4
0.01
0.02
GS
0.05
0.5
0.2
0.1
≥10 V
10
p
/T
-3
single pulse
40
40
10
-2
T
T
t
A
A
10
p
80
80
[°C]
[°C]
[s]
-1
10
0
120
120
10
2012-03-14
2012-03-14
BSS126
1
160
160
10
2