BUZ32 H Infineon Technologies, BUZ32 H Datasheet - Page 10

• Manufacturer Part Number: BUZ32 H
• Description: MOSFET N-Channel 200V Transistor
• Manufacturer: Infineon Technologies

Specifications of BUZ32 H

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.5 A
• Resistance Drain-source Rds (on): 0.4 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 30 nS
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 75 W
• Rise Time: 40 nS
• Typical Turn-off Delay Time: 55 nS
• Part # Aliases: BUZ32HXK BUZ32HXKSA1 SP000682998

BUZ 32 H
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
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Page 10
2009-11-10
Rev. 2.4