PSMN013-30YLC,115 NXP Semiconductors, PSMN013-30YLC,115 Datasheet - Page 4

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PSMN013-30YLC,115

Manufacturer Part Number
PSMN013-30YLC,115
Description
MOSFET N-CH 30 V 13.6 MOHMS LOGIC LEVEL MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN013-30YLC,115

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
32 A
Resistance Drain-source Rds (on)
16.9 mOhms
Mounting Style
SMD/SMT
Package / Case
SO-8
Power Dissipation
26 W
Factory Pack Quantity
1500

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PSMN013-30YLC,115
Quantity:
226
NXP Semiconductors
PSMN013-30YLC
Product data sheet
Fig 4.
(A)
I
D
10
10
10
10
-1
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology
Limit R
DSon
All information provided in this document is subject to legal disclaimers.
= V
1
DS
/ I
Rev. 3 — 24 October 2011
D
DC
10
PSMN013-30YLC
V
DS
(V)
t
100 μ s
1 ms
10 ms
100 ms
p
=10 μ s
© NXP B.V. 2011. All rights reserved.
003aag247
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2
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