PSMN013-30YLC,115 NXP Semiconductors, PSMN013-30YLC,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN013-30YLC,115
• Description: MOSFET N-CH 30 V 13.6 MOHMS LOGIC LEVEL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-30YLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 32 A
• Resistance Drain-source Rds (on): 16.9 mOhms
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Power Dissipation: 26 W
• Factory Pack Quantity: 1500

NXP Semiconductors
PSMN013-30YLC
Product data sheet
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(A)
I
(S)
g
10
D
10
10
10
10
10
50
fs
40
30
20
10
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
10
Min
1
N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology
20
Typ Max
2
30
V
All information provided in this document is subject to legal disclaimers.
003aag253
GS
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I
D
(V)
(A)
40
Rev. 3 — 24 October 2011
3
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(V)
(A)
I
D
40
30
20
10
3
2
1
0
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics; drain current as a
0
Min (5mA)
Max (1mA)
0
1
PSMN013-30YLC
T
j
= 150 ° C
I
D
=5mA
60
2
1mA
T
j
120
= 25 ° C
3
© NXP B.V. 2011. All rights reserved.
003aag252
003aag254
T
V
j
GS
(DC)
(V)
180
4
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