PSMN013-30YLC,115 NXP Semiconductors, PSMN013-30YLC,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN013-30YLC,115
• Description: MOSFET N-CH 30 V 13.6 MOHMS LOGIC LEVEL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-30YLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 32 A
• Resistance Drain-source Rds (on): 16.9 mOhms
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Power Dissipation: 26 W
• Factory Pack Quantity: 1500

NXP Semiconductors
PSMN013-30YLC
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
R
(mΩ)
DSon
50
40
30
20
10
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
2.8
10
Q
GS1
I
Q
D
N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology
GS
20
Q
3.0
GS2
Q
G(tot)
30
V
Q
GS
GD
(V) = 3.5
40
All information provided in this document is subject to legal disclaimers.
003aag255
003aaa508
4.5
10
I
D
(A)
50
Rev. 3 — 24 October 2011
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
(V)
GS
a
1.5
0.5
10
2
1
0
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
2
0
6V
PSMN013-30YLC
24V
4
60
6
4.5V
V
DS
120
= 15V
V
© NXP B.V. 2011. All rights reserved.
GS
8
003aag256
003aag257
T
Q
=10V
j
G
(DC)
(nC)
180
10
9 of 15