PSMN013-30YLC,115 NXP Semiconductors, PSMN013-30YLC,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN013-30YLC,115
• Description: MOSFET N-CH 30 V 13.6 MOHMS LOGIC LEVEL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-30YLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 32 A
• Resistance Drain-source Rds (on): 16.9 mOhms
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Power Dissipation: 26 W
• Factory Pack Quantity: 1500

NXP Semiconductors
Table 6.
PSMN013-30YLC
Product data sheet
Symbol
Q
Source-drain diode
V
t
Q
t
t
rr
a
b
Fig 6.
SD
oss
r
(A)
I
D
40
30
20
10
0
function of drain-source voltage; typical values
Output characteristics; drain current as a
0
Characteristics
10
Parameter
output charge
source-drain voltage
reverse recovery time
recovered charge
reverse recovery rise time
reverse recovery fall time
4.5
1
3.5
N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology
…continued
2
V
3
GS
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003aag249
(V) = 3.0
V
DS
(V)
2.8
2.6
2.4
2.2
Conditions
V
T
I
see
I
V
V
dI
see
S
S
Rev. 3 — 24 October 2011
j
GS
GS
GS
4
S
= 25 °C
= 10 A; V
= 10 A; dI
/dt = -100 A/µs; V
Figure 17
Figure 18
= 0 V; V
= 0 V; V
= 0 V; I
GS
S
S
DS
DS
/dt = -100 A/µs;
= 10 A;
= 0 V; T
Fig 7.
= 15 V; f = 1 MHz;
= 15 V
R
(m Ω )
DSon
DS
40
30
20
10
0
j
of gate-source voltage; typical values
= 15 V;
Drain-source on-state resistance as a function
= 25 °C;
0
4
PSMN013-30YLC
8
Min
-
-
-
-
-
-
12
Typ
3.3
0.86
16
6
9.5
6.5
© NXP B.V. 2011. All rights reserved.
16
003aag250
V
GS
Max
-
1.1
-
-
-
-
(V)
20
Unit
nC
V
ns
nC
ns
ns
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