NX3008NBKW,115 NXP Semiconductors, NX3008NBKW,115 Datasheet
NX3008NBKW,115
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NX3008NBKW,115 Summary of contents
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NX3008NBKW 30 V, 350 mA N-channel Trench MOSFET Rev. 1 — 2 August 2011 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. ...
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... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain 3. Ordering information Table 3. Ordering information Type number Package Name NX3008NBKW SC-70 4. Marking Table 4. Marking codes Type number NX3008NBKW [ placeholder for manufacturing site code NX3008NBKW Product data sheet ...
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... NXP Semiconductors 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V gate-source voltage GS I drain current D I peak drain current DM P total power dissipation tot T junction temperature j T ambient temperature amb ...
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... NXP Semiconductors 120 P der (%) -75 -25 25 Fig 1. Normalized total power dissipation as a function of junction temperature ( single pulse 100 ms p (4) DC °C sp (5) DC ° amb Fig 3. Safe operating area ...
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... NXP Semiconductors 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter R thermal resistance from junction to ambient th(j-a) R thermal resistance from junction to solder point th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm ...
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... NXP Semiconductors 7. Characteristics Table 7. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GSth voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance g forward fs transconductance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge ...
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... NXP Semiconductors 0.4 4 2.5 V (A) 0.3 0.2 0.1 0 °C j Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 6 R (on) DS (Ω) (1) ( 0.0 0.1 0 ° Fig 8. Drain-source on-state resistance as a function of drain current ...
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... NXP Semiconductors 0 (A) 0.3 0.2 0.1 0 > DSon ( ° 150 °C j Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 1.5 V GS(th) (V) (1) 1.0 (2) 0.5 (3) 0.0 - 0.25 mA (1) maximum values (2) typical values (3) minimum values Fig 12. Gate-source threshold voltage as a function of ...
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... NXP Semiconductors ( 0.0 0 350 mA Fig 14. Gate-source voltage as a function of gate charge; typical values ( 150 ° °C j Fig 16. Source current as a function of source-drain voltage; typical values NX3008NBKW Product data sheet 001aao275 0 ...
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... NXP Semiconductors 8. Test information Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. NX3008NBKW Product data sheet duty cycle δ ...
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... NXP Semiconductors 9. Package outline Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT b p max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 Fig 18. Package outline SOT323 (SC-70) NX3008NBKW Product data sheet scale ...
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... NXP Semiconductors 10. Soldering 0.6 2.35 (3×) Fig 19. Reflow soldering footprint for SOT323 (SC-70) 1.425 (3×) 3.65 2.1 Fig 20. Wave soldering footprint for SOT323 (SC-70) NX3008NBKW Product data sheet 2.65 1.85 1.325 2 3 1.3 0.5 1 (3×) 0.55 (3×) 4.6 2.575 All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 August 2011 NX3008NBKW ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date NX3008NBKW v.1 20110802 NX3008NBKW Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 August 2011 NX3008NBKW 30 V, 350 mA N-channel Trench MOSFET ...
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... NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ...
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... In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. ...
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... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .5 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . .10 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . .10 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 11 Revision history ...