NX3008NBKW,115 NXP Semiconductors, NX3008NBKW,115 Datasheet - Page 12

• Manufacturer Part Number: NX3008NBKW,115
• Description: MOSFET 30V 350 MA N-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008NBKW,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 350 mA
• Resistance Drain-source Rds (on): 1.4 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323-3
• Fall Time: 19 ns
• Forward Transconductance Gfs (max / Min): 310 mS
• Gate Charge Qg: 0.52 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 310 mW
• Rise Time: 11 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 69 ns

NXP Semiconductors
10. Soldering
NX3008NBKW
Product data sheet
Fig 19. Reflow soldering footprint for SOT323 (SC-70)
Fig 20. Wave soldering footprint for SOT323 (SC-70)
3.65 2.1
2.35
(3×)
0.6
1.425
(3×)
0.55
(3×)
3
2.65
1.85
All information provided in this document is subject to legal disclaimers.
2.575
4.6
1.325
2
1
Rev. 1 — 2 August 2011
(3×)
0.5
1.3
(2×)
09
1.8
30 V, 350 mA N-channel Trench MOSFET
Dimensions in mm
direction during soldering
Dimensions in mm
NX3008NBKW
preferred transport
solder lands
solder resist
solder paste
occupied area
sot323_fr
solder lands
solder resist
occupied area
sot323_fw
© NXP B.V. 2011. All rights reserved.
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