NX3008NBKW,115 NXP Semiconductors, NX3008NBKW,115 Datasheet - Page 8

• Manufacturer Part Number: NX3008NBKW,115
• Description: MOSFET 30V 350 MA N-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008NBKW,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 350 mA
• Resistance Drain-source Rds (on): 1.4 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323-3
• Fall Time: 19 ns
• Forward Transconductance Gfs (max / Min): 310 mS
• Gate Charge Qg: 0.52 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 310 mW
• Rise Time: 11 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 69 ns

NXP Semiconductors
NX3008NBKW
Product data sheet
Fig 10. Transfer characteristics: drain current as a
Fig 12. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
0.4
0.3
0.2
0.1
0.0
1.5
1.0
0.5
0.0
-60
function of gate-source voltage; typical values
junction temperature
V
(1) T
(2) T
I
(1) maximum values
(2) typical values
(3) minimum values
0
D
DS
= 0.25 mA; V
> I
j
j
= 25 °C
= 150 °C
D
x R
0
DSon
1
DS
(1)
(2)
(3)
= V
60
GS
(1)
2
120
(2)
V
All information provided in this document is subject to legal disclaimers.
GS
001aao271
001aao273
T
j
(V)
(˚C)
180
3
Rev. 1 — 2 August 2011
Fig 11. Normalized drain-source on-state resistance as
Fig 13. Input, output and reverse transfer capacitances
(pF)
C
a
10
2.0
1.5
1.0
0.5
0.0
10
1
2
10
-60
a function of junction temperature; typical
values
as a function of drain-source voltage; typical
values
f = 1 MHz; V
(1)C
(2)C
(3)C
-1
30 V, 350 mA N-channel Trench MOSFET
iss
oss
rss
0
GS
1
= 0 V
NX3008NBKW
60
10
(1)
(2)
(3)
120
V
© NXP B.V. 2011. All rights reserved.
DS
001aao272
T
001aao274
j
(V)
(˚C)
180
10
2
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