NX3008NBKW,115 NXP Semiconductors, NX3008NBKW,115 Datasheet - Page 3

• Manufacturer Part Number: NX3008NBKW,115
• Description: MOSFET 30V 350 MA N-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008NBKW,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 350 mA
• Resistance Drain-source Rds (on): 1.4 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323-3
• Fall Time: 19 ns
• Forward Transconductance Gfs (max / Min): 310 mS
• Gate Charge Qg: 0.52 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 310 mW
• Rise Time: 11 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 69 ns

NXP Semiconductors
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
NX3008NBKW
Product data sheet
Symbol
V
V
I
I
P
T
T
T
Source-drain diode
I
ESD maximum rating
V
D
DM
S
j
amb
stg
DS
GS
tot
ESD
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Measured between all pins.
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
electrostatic discharge voltage
All information provided in this document is subject to legal disclaimers.
Conditions
T
V
V
T
T
T
T
HBM
Rev. 1 — 2 August 2011
j
amb
amb
sp
amb
GS
GS
= 25 °C
= 25 °C
= 4.5 V; T
= 4.5 V; T
= 25 °C; single pulse; t
= 25 °C
= 25 °C
amb
amb
= 25 °C
= 100 °C
30 V, 350 mA N-channel Trench MOSFET
p
≤ 10 µs
2
.
NX3008NBKW
[1]
[1]
[2]
[1]
[1]
[3]
Min
-
-8
-
-
-
-
-
-
-55
-55
-65
-
-
© NXP B.V. 2011. All rights reserved.
150
150
150
Max
30
8
350
230
1.4
260
310
830
300
2000
Unit
V
V
mA
mA
A
mW
mW
mW
°C
°C
°C
mA
V
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