BSS84AKMB,315 NXP Semiconductors, BSS84AKMB,315 Datasheet
BSS84AKMB,315
Manufacturer Part Number
BSS84AKMB,315
Description
MOSFET P-Chan -50V -230mA
Manufacturer
NXP Semiconductors
Datasheet
1.BSS84AKMB315.pdf
(15 pages)
Specifications of BSS84AKMB,315
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 230 mA
Resistance Drain-source Rds (on)
7.5 Ohms
Configuration
Single
Mounting Style
SMD/SMT
Package / Case
SOT-883B
Power Dissipation
715 mW
Factory Pack Quantity
10000
1. Product profile
Table 1.
[1]
Symbol
V
V
I
Static characteristics
R
D
DS
GS
DSon
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
BSS84AKMB
50 V, single P-channel Trench MOSFET
Rev. 1 — 6 June 2012
Logic-level compatible
Very fast switching
Trench MOSFET technology
Relay driver
High-speed line driver
Conditions
T
V
V
j
GS
GS
= 25 °C
= -10 V; T
= -10 V; I
D
amb
= -100 mA; T
= 25 °C
j
= 25 °C
ElectroStatic Discharge (ESD)
protection up to 1 kV
Ultra thin package profile with
0.37 mm height
High-side load switch
Switching circuits
[1]
Min
-
-20
-
-
Product data sheet
Typ
-
-
-
4.5
2
Max
-50
20
-230
7.5
.
Unit
V
V
mA
Ω
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