BSS84AKMB,315 NXP Semiconductors, BSS84AKMB,315 Datasheet - Page 5

• Manufacturer Part Number: BSS84AKMB,315
• Description: MOSFET P-Chan -50V -230mA
• Manufacturer: NXP Semiconductors

Specifications of BSS84AKMB,315

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 230 mA
• Resistance Drain-source Rds (on): 7.5 Ohms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: SOT-883B
• Power Dissipation: 715 mW
• Factory Pack Quantity: 10000

NXP Semiconductors
BSS84AKMB
Product data sheet
Fig 5.
Fig 6.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
3
2
3
2
10
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 1 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−3
−3
0
duty cycle = 1
duty cycle = 1
0.25
0.25
0.5
0.1
0.5
0.1
0
0.75
0.33
0.05
0.02
0.01
0.75
0.33
0.05
0.02
0.01
0.2
0.2
10
10
−2
−2
All information provided in this document is subject to legal disclaimers.
10
10
−1
−1
2
Rev. 1 — 6 June 2012
1
1
50 V, single P-channel Trench MOSFET
10
10
BSS84AKMB
10
10
2
2
t
t
p
p
© NXP B.V. 2012. All rights reserved.
(s)
(s)
017aaa109
017aaa110
10
10
3
3
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