BSS84AKMB,315 NXP Semiconductors, BSS84AKMB,315 Datasheet - Page 4

• Manufacturer Part Number: BSS84AKMB,315
• Description: MOSFET P-Chan -50V -230mA
• Manufacturer: NXP Semiconductors

Specifications of BSS84AKMB,315

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 230 mA
• Resistance Drain-source Rds (on): 7.5 Ohms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: SOT-883B
• Power Dissipation: 715 mW
• Factory Pack Quantity: 10000

NXP Semiconductors
6. Thermal characteristics
Table 6.
[1]
[2]
BSS84AKMB
Product data sheet
Symbol
R
R
Fig 4.
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
(A)
-10
-10
I
D
-10
-1
-1
-2
10
voltage
I
(1) t
(2) DC; T
(3) t
(4) t
(5) DC; T
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
DM
-1
Thermal characteristics
is single pulse
p
p
p
= 1 ms
= 10 ms
= 100 ms
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
sp
amb
= 25 °C
= 25 °C; drain mounting pad 1 cm
Conditions
in free air
All information provided in this document is subject to legal disclaimers.
-1
Rev. 1 — 6 June 2012
2
50 V, single P-channel Trench MOSFET
-10
[1]
[2]
2
.
Min
-
-
-
V
BSS84AKMB
DS
(V)
Typ
305
150
-
© NXP B.V. 2012. All rights reserved.
(1)
(2)
(3)
(4)
(5)
001aao138
Max
350
175
40
-10
2
Unit
K/W
K/W
K/W
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