BSS84AKMB,315 NXP Semiconductors, BSS84AKMB,315 Datasheet - Page 10
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BSS84AKMB,315
Manufacturer Part Number
BSS84AKMB,315
Description
MOSFET P-Chan -50V -230mA
Manufacturer
NXP Semiconductors
Datasheet
1.BSS84AKMB315.pdf
(15 pages)
Specifications of BSS84AKMB,315
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 230 mA
Resistance Drain-source Rds (on)
7.5 Ohms
Configuration
Single
Mounting Style
SMD/SMT
Package / Case
SOT-883B
Power Dissipation
715 mW
Factory Pack Quantity
10000
NXP Semiconductors
8. Test information
9. Package outline
BSS84AKMB
Product data sheet
Fig 18. Duty cycle definition
Fig 19. Package outline SOT883B (DFN1006B-3)
1.05
0.95
Dimensions in mm
0.65
All information provided in this document is subject to legal disclaimers.
P
1
0.65
0.55
0.35
0.55
0.47
3
Rev. 1 — 6 June 2012
2
t
1
0.20
0.12
0.30
0.22
0.30
0.22
t
2
duty cycle δ =
006aaa812
0.40
0.34
t
t
t
1
2
50 V, single P-channel Trench MOSFET
0.04 max
11-11-02
BSS84AKMB
© NXP B.V. 2012. All rights reserved.
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