SCT2450KEC ROHM Semiconductor, SCT2450KEC Datasheet

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SCT2450KEC

Manufacturer Part Number
SCT2450KEC
Description
MOSFET SiC FET 1200V 5A 450mOhm
Manufacturer
ROHM Semiconductor
Datasheet

Specifications of SCT2450KEC

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
- 6 V to 22 V
Continuous Drain Current
10 A
Resistance Drain-source Rds (on)
450 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-247-3
Fall Time
34 ns
Forward Transconductance Gfs (max / Min)
1 S
Gate Charge Qg
27 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
85 W
Rise Time
17 ns
Typical Turn-off Delay Time
38 ns
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
・Solar inverters
・DC/DC converters
・Switch mode power supplies
・Induction heating
・Motor drives
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation (T
Junction temperature
Range of storage temperature
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© 2013 ROHM Co., Ltd. All rights reserved.
Features
Application
Absolute maximum ratings (T
R
DS(on)
V
SCT2450KE
P
DSS
I
D
D
(Typ.)
N-channel SiC power MOSFET
c
Parameter
= 25°C)
450mΩ
1200V
85W
10A
a
= 25°C)
T
T
c
c
= 25°C
= 100°C
1/13
TO-247
Type
Outline
Inner circuit
Packaging specifications
Symbol
I
D,pulse
V
V
I
I
T
P
D
D
GSS
T
DSS
stg
D
Packing
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
*1
*1
j
(1)
*2
(2)
(3)
-55 to +175
-6 to 22
Value
1200
*1
175
10
25
85
7
2013.03 - Rev.T1
TENTATIVE
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
SCT2450KE
Datasheet
Tube
Unit
30
°C
°C
W
V
A
A
A
V
-
-
-

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SCT2450KEC Summary of contents

Page 1

SCT2450KE N-channel SiC power MOSFET V DSS R (Typ.) DS(on Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS ...

Page 2

SCT2450KE Thermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Electrical characteristics (T a Parameter Drain - Source breakdown voltage Zero gate voltage drain current Gate - Source leakage current Gate ...

Page 3

SCT2450KE Electrical characteristics (T a Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related Turn - on delay time Rise time Turn - off delay time Fall time Turn - on switching loss Turn - ...

Page 4

SCT2450KE Body diode electrical characteristics (Source-Drain) (T Parameter Inverse diode continuous, forward current Inverse diode direct current, pulsed Forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Typical Transient Thermal Characteristics Symbol Value R 230m th1 R ...

Page 5

SCT2450KE Electrical characteristic curves Fig.1 Power Dissipation Derating Curve 100 Junction Temperature : Tj [°C] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width 25ºC a ...

Page 6

SCT2450KE Electrical characteristic curves Fig.4 Typical Output Characteristics(I) 10 20V 18V 16V 8 14V Drain - Source Voltage : V Fig 150°C Typical Output j Characteristics(I) 10 20V T = ...

Page 7

SCT2450KE Electrical characteristic curves Fig.8 Typical Transfer Characteristics ( 10V DS Pulsed 1 0.1 0.01 0.001 Gate - Source Voltage : V Fig.10 Gate Threshold Voltage ...

Page 8

SCT2450KE Electrical characteristic curves Fig.12 Static Drain - Source On - State Resistance vs. Gate - Source Voltage 1.4 1 0.6 D 0.4 0 Gate - Source Voltage : ...

Page 9

SCT2450KE Electrical characteristic curves Fig.15 Typical Capacitance      vs. Drain - Source Voltage 10000 1000 100 25º 1MHz 0 Drain - Source Voltage : V Fig.17 Switching Characteristics ...

Page 10

SCT2450KE Electrical characteristic curves Fig.19 Typical Switching Loss      vs. Drain - Source Voltage 100 T = 25º = 18V/ 0Ω L=500µ ...

Page 11

SCT2450KE Electrical characteristic curves Fig.22 Inverse Diode Forward Current      vs. Source - Drain Voltage Pulsed 1 0.1 0. Source - Drain Voltage : V www.rohm.com © 2013 ROHM Co., Ltd. ...

Page 12

SCT2450KE Measurement circuits Fig.1-1 Switching Time Measurement Circuit D.U. Fig.2-1 Gate Charge Measurement Circuit D.U.T. I G(Const.) Fig.3-1 Switching Energy Measurement Circuit Same type L D.U.T. device ...

Page 13

SCT2450KE Dimensions (Unit : mm) TO-247 www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 13/13 Data Sheet TENTATIVE 2013.03 - Rev.T1 ...

Page 14

The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifica- tions : 3) Although ROHM is continuously working to improve product reliability and ...

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