SCT2450KEC ROHM Semiconductor, SCT2450KEC Datasheet - Page 7

• Manufacturer Part Number: SCT2450KEC
• Description: MOSFET SiC FET 1200V 5A 450mOhm
• Manufacturer: ROHM Semiconductor

Specifications of SCT2450KEC

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: - 6 V to 22 V
• Continuous Drain Current: 10 A
• Resistance Drain-source Rds (on): 450 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-247-3
• Fall Time: 34 ns
• Forward Transconductance Gfs (max / Min): 1 S
• Gate Charge Qg: 27 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 85 W
• Rise Time: 17 ns
• Typical Turn-off Delay Time: 38 ns

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Electrical characteristic curves
SCT2450KE
0.001
0.01
Fig.8 Typical Transfer Characteristics (I)
0.1
10
1
4.5
3.5
2.5
1.5
0.5
Fig.10 Gate Threshold Voltage
5
4
3
2
1
0
0
-50
2
V
Pulsed
DS
vs. Junction Temperature
Junction Temperature : T
Gate - Source Voltage : V
= 10V
4
0
6
8
50
10 12 14 16 18 20
100
T
T
T
T
V
I
a
a
a
a
D
= 150ºC
= 75ºC
= 25ºC
= -25ºC
DS
= 1mA
= 10V
150
j
GS
[
°C
[V]
]
200
7/13
10
0.01
9
8
7
6
5
4
3
2
1
0
0.1
Fig.9 Typical Transfer Characteristics (II)
10
1
Fig.11 Transconductance vs. Drain
Current
0
0.01
2
V
Pulsed
V
Pulsed
DS
DS
= 10V
4
= 10V
Gate - Source Voltage : V
6
0.1
Drain Current : I
8
10 12 14 16 18 20
2013.03 - Rev.T1
T
T
T
T
1
a
a
a
a
D
= 150ºC
= 75ºC
= 25ºC
= -25ºC
TENTATIVE
T
T
T
T
[A]
Data Sheet
a
a
a
a
= 150ºC
= 75ºC
= 25ºC
= -25ºC
GS
[V]
10