SCT2450KEC ROHM Semiconductor, SCT2450KEC Datasheet - Page 13

• Manufacturer Part Number: SCT2450KEC
• Description: MOSFET SiC FET 1200V 5A 450mOhm
• Manufacturer: ROHM Semiconductor

Specifications of SCT2450KEC

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: - 6 V to 22 V
• Continuous Drain Current: 10 A
• Resistance Drain-source Rds (on): 450 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-247-3
• Fall Time: 34 ns
• Forward Transconductance Gfs (max / Min): 1 S
• Gate Charge Qg: 27 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 85 W
• Rise Time: 17 ns
• Typical Turn-off Delay Time: 38 ns

Data Sheet
SCT2450KE
TENTATIVE
Dimensions (Unit : mm)
TO-247
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2013.03 - Rev.T1