SCT2450KEC ROHM Semiconductor, SCT2450KEC Datasheet - Page 5

• Manufacturer Part Number: SCT2450KEC
• Description: MOSFET SiC FET 1200V 5A 450mOhm
• Manufacturer: ROHM Semiconductor

Specifications of SCT2450KEC

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: - 6 V to 22 V
• Continuous Drain Current: 10 A
• Resistance Drain-source Rds (on): 450 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-247-3
• Fall Time: 34 ns
• Forward Transconductance Gfs (max / Min): 1 S
• Gate Charge Qg: 27 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 85 W
• Rise Time: 17 ns
• Typical Turn-off Delay Time: 38 ns

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Electrical characteristic curves
SCT2450KE
0.01
0.1
10
0.0001
1
90
80
70
60
50
40
30
20
10
Fig.3 Typical Transient Thermal
Fig.1 Power Dissipation Derating Curve
0
0
T
Single Pulse
a
Resistance vs. Pulse Width
= 25ºC
0.001
Junction Temperature : Tj [°C]
50
Pulse Width : PW [s]
0.01
100
0.1
150
1
200
10
5/13
0.01
100
0.1
10
Fig.2 Maximum Safe Operating Area
1
0.1
Operation in this
area is limited
by R
T
Single Pulse
a
= 25ºC
Drain - Source Voltage : V
DS(ON)
1
P
W
P
= 100us
W
P
W
10
= 1ms
P
= 10ms
W
= 100ms
100
2013.03 - Rev.T1
1000
TENTATIVE
DS
Data Sheet
[V]
10000