SCT2450KEC ROHM Semiconductor, SCT2450KEC Datasheet - Page 10

• Manufacturer Part Number: SCT2450KEC
• Description: MOSFET SiC FET 1200V 5A 450mOhm
• Manufacturer: ROHM Semiconductor

Specifications of SCT2450KEC

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: - 6 V to 22 V
• Continuous Drain Current: 10 A
• Resistance Drain-source Rds (on): 450 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-247-3
• Fall Time: 34 ns
• Forward Transconductance Gfs (max / Min): 1 S
• Gate Charge Qg: 27 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 85 W
• Rise Time: 17 ns
• Typical Turn-off Delay Time: 38 ns

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Electrical characteristic curves
SCT2450KE
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
120
110
100
Fig.21 Typical Switching Loss
vs. External Gate Resistance
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0
0
T
V
I
V
L=500µH
T
I
V
R
L=500µH
D
D
a
DD
GS
a
GS
=3A
G
=3A
External Gate Resistance : R
Drain - Source Voltage : V
= 25ºC
= 25ºC
= 0Ω
=600V
5
200
= 18V/0V
= 18V/0V
10
400
15
600
E
20
E
on
off
E
E
on
off
800
DS
25
G
[V]
[Ω]
1000
30
10/13
300
250
200
150
100
Fig.20 Typical Switching Loss
vs. Drain Current
50
0
0
T
V
V
R
L=500µH
a
DD
GS
G
= 25ºC
= 0Ω
=600V
= 18V/0V
2
Drain - Current : I
4
6
2013.03 - Rev.T1
D
8
E
E
TENTATIVE
[A]
on
off
Data Sheet
10
12