BUK9675-100A /T3 NXP Semiconductors, BUK9675-100A /T3 Datasheet - Page 7

• Manufacturer Part Number: BUK9675-100A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9675-100A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 23 A
• Resistance Drain-source Rds (on): 0.072 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 57 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 98 W
• Rise Time: 120 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 58 ns
• Part # Aliases: BUK9675-100A,118

NXP Semiconductors
BUK9675-100A
Product data sheet
Fig 12. Gate-source threshold voltage as a function of
Fig 14. Input, output and reverse transfer capacitances
Fig 16. Source (diode forward) current as a function of
V
GS(th)
(nF)
(V)
(A)
I
C
F
2.5
2.0
1.5
1.0
0.5
40
30
20
10
0
−100
3
2
1
0
0
10
junction temperature
as a function of drain-source voltage; typical
values
source-drain (diode forward) voltage; typical
values
I
V
V
0
D
−2
GS
GS
= 1 mA; V
= 0 V; f = 1 MHz
= 0 V
C
C
C
10
oss
rss
0.4
iss
T
−1
j
DS
= 150 °C
0
= V
maximum
GS
minimum
0.8
typical
1
100
T
1.2
10
j
= 25 °C
T
All information provided in this document is subject to legal disclaimers.
V
j
V
(°C)
SDS
003aaf181
003aaf183
003aaf185
DS
(V)
(V)
200
10
1.6
Rev. 04 — 19 April 2011
2
Fig 13. Sub-threshold drain current as a function of
Fig 15. Gate-source voltage as a function of gate
Fig 17. Normalised drain-source avalanche energy as a
W
V
(%)
(A)
(V)
I
DSS
10
10
10
10
10
10
GS
D
100
80
60
40
20
−1
−2
−3
−4
−5
−6
5
4
3
2
1
0
0
gate-source voltage
charge; typical values
20
function of mounting-base temperature.
T
T
I
0
0
D
j
j
= 25 °C; V
= 25 °C; I
= 75 A
N-channel TrenchMOS logic level FET
0.5
5
60
D
DS
V
= 25 A
DS
= V
10
2 %
BUK9675-100A
1
= 14 V
GS
100
1.5
typical
15
140
V
DS
© NXP B.V. 2011. All rights reserved.
20
98 %
2
T
= 44 V
Q
mb
003aaf182
V
003aaf184
003aaf186
GS
G
(°C)
(nC)
(V)
180
2.5
25
7 of 12