BUK9675-100A /T3 NXP Semiconductors, BUK9675-100A /T3 Datasheet - Page 9
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BUK9675-100A /T3
Manufacturer Part Number
BUK9675-100A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet
1.BUK9675-100A_T3.pdf
(12 pages)
Specifications of BUK9675-100A /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
23 A
Resistance Drain-source Rds (on)
0.072 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
57 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
98 W
Rise Time
120 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
58 ns
Part # Aliases
BUK9675-100A,118
NXP Semiconductors
8. Revision history
Table 7.
BUK9675-100A
Product data sheet
Document ID
BUK9675-100A v.4
Modifications:
BUK9675-100A v.3
Revision history
Release date
20110419
20110328
•
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Rev. 04 — 19 April 2011
Change notice
-
-
N-channel TrenchMOS logic level FET
BUK9675-100A
Supersedes
BUK9675-100A v.3
BUK9575_9675-100A v.2
© NXP B.V. 2011. All rights reserved.
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