PHB18NQ10T /T3 NXP Semiconductors, PHB18NQ10T /T3 Datasheet

no-image

PHB18NQ10T /T3

Manufacturer Part Number
PHB18NQ10T /T3
Description
MOSFET TRENCH-100
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PHB18NQ10T /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Resistance Drain-source Rds (on)
0.09 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
12 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
79 W
Rise Time
36 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
18 ns
Part # Aliases
PHB18NQ10T,118
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
Table 1.
Symbol
V
P
Static characteristics
R
I
Dynamic characteristics
Q
D
DS
tot
DSon
GD
PHB18NQ10T
N-channel TrenchMOS standard level FET
Rev. 02 — 17 December 2010
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
DC-to-DC converters
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
gate-drain charge V
Conditions
T
T
T
V
V
j
mb
mb
GS
GS
DS
≥ 25 °C; T
= 25 °C; V
= 25 °C
= 10 V; I
= 10 V; I
= 80 V; T
j
D
D
≤ 175 °C
j
= 25 °C
GS
= 9 A; T
= 18 A;
= 10 V
Suitable for high frequency
applications due to fast switching
characteristics
Switched-mode power supplies
j
= 25 °C
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
80
8
Max Unit
100
18
79
90
-
V
A
W
mΩ
nC

Related parts for PHB18NQ10T /T3

PHB18NQ10T /T3 Summary of contents

Page 1

PHB18NQ10T N-channel TrenchMOS standard level FET Rev. 02 — 17 December 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate [ drain 3 S source mb D mounting base; connected to drain [ not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name PHB18NQ10T D2PAK PHB18NQ10T Product data sheet ...

Page 3

... NXP Semiconductors 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V drain-gate voltage DGR V gate-source voltage GS I drain current D I peak drain current DM P total power dissipation tot T storage temperature stg ...

Page 4

... NXP Semiconductors DS(on (A) 10 D.C. 1 − ° single pulse mb DM Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from th(j-mb) junction to mounting base ...

Page 5

... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge GD C input capacitance ...

Page 6

... NXP Semiconductors ( 0.4 0 °C j Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values ( 175 ° > DSon Fig 8. Transfer characteristics: drain current as a function of gate-source voltage ...

Page 7

... NXP Semiconductors − (A) −2 10 −3 10 minimum −4 10 −5 10 − ° Fig 12. Sub-threshold drain current as a function of gate-source voltage ( ° Fig 14. Gate-source voltage as a function of gate charge ...

Page 8

... NXP Semiconductors 7. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped DIMENSIONS (mm are the original dimensions UNIT c 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 OUTLINE VERSION IEC SOT404 Fig 16. Package outline SOT404 (D2PAK) PHB18NQ10T Product data sheet 2 ...

Page 9

... Data sheet status Product data sheet • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PHB18NQ10T separated from data sheet PHB_PHD_PHP18NQ10T v.1. ...

Page 10

... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 11

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 12

... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .9 9 Legal information .10 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10 9.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 9 ...

Related keywords