PHB18NQ10T /T3 NXP Semiconductors, PHB18NQ10T /T3 Datasheet - Page 2

• Manufacturer Part Number: PHB18NQ10T /T3
• Description: MOSFET TRENCH-100
• Manufacturer: NXP Semiconductors

Specifications of PHB18NQ10T /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Resistance Drain-source Rds (on): 0.09 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 12 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 79 W
• Rise Time: 36 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 18 ns
• Part # Aliases: PHB18NQ10T,118

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
PHB18NQ10T
Product data sheet
Pin
1
2
3
mb
Type number
PHB18NQ10T
It is not possible to make connection to pin 2.
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Package
Name
D2PAK
[1]
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 17 December 2010
Simplified outline
SOT404 (D2PAK)
1
mb
2
3
N-channel TrenchMOS standard level FET
Graphic symbol
PHB18NQ10T
mbb076
G
© NXP B.V. 2010. All rights reserved.
D
S
Version
SOT404
2 of 12