BUK963R2-40B /T3 NXP Semiconductors, BUK963R2-40B /T3 Datasheet - Page 4

• Manufacturer Part Number: BUK963R2-40B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK963R2-40B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 222 A
• Resistance Drain-source Rds (on): 0.0028 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 192 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 268 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 257 ns
• Part # Aliases: BUK963R2-40B,118

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK963R2-40B
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
(A)
I
10
10
10
D
10
10
10
10
−1
−2
−3
1
1
4
3
2
10
10
0.1
0.05
−1
0.2
0.02
single shot
−6
δ = 0.5
10
−5
Limit R
Capped at 100 A due to package
All information provided in this document is subject to legal disclaimers.
DSon
10
Rev. 5 — 16 February 2011
1
Conditions
see
minimum footprint; mounted on
a printed-circuit board
= V
−4
DS
Figure 4
/ I
D
10
−3
10
DC
10
−2
N-channel TrenchMOS logic level FET
P
V
10
DS
t
p
−1
(V)
BUK963R2-40B
T
t
100 μs
1 ms
10 ms
100 ms
p
t
p
= 10 μs
Min
-
-
δ =
(s)
03nh37
03nh36
T
t
p
t
10
1
2
Typ
-
50
© NXP B.V. 2011. All rights reserved.
Max
0.5
-
Unit
K/W
K/W
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