BUK963R2-40B /T3 NXP Semiconductors, BUK963R2-40B /T3 Datasheet - Page 8

• Manufacturer Part Number: BUK963R2-40B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK963R2-40B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 222 A
• Resistance Drain-source Rds (on): 0.0028 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 192 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 268 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 257 ns
• Part # Aliases: BUK963R2-40B,118

NXP Semiconductors
BUK963R2-40B
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
5
4
3
2
1
0
charge; typical values
0
25
V
DD
= 14 V
50
(A)
I
S
100
75
50
25
75
0
V
0.0
DD
All information provided in this document is subject to legal disclaimers.
Q
= 32 V
G
(nC)
03nh52
0.2
Rev. 5 — 16 February 2011
100
T
T
j
j
= 175 °C
= 25 °C
0.4
Fig 14. Input, output and reverse transfer capacitances
0.6
12000
(pF)
8000
4000
C
0
10
as a function of drain-source voltage; typical
values
0.8
−1
V
SD
03nh51
(V)
N-channel TrenchMOS logic level FET
1.0
1
C
C
C
BUK963R2-40B
rss
iss
oss
10
V
© NXP B.V. 2011. All rights reserved.
DS
(V)
03nh58
10
2
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