BUK963R2-40B /T3 NXP Semiconductors, BUK963R2-40B /T3 Datasheet - Page 5

• Manufacturer Part Number: BUK963R2-40B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK963R2-40B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 222 A
• Resistance Drain-source Rds (on): 0.0028 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 192 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 268 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 257 ns
• Part # Aliases: BUK963R2-40B,118

NXP Semiconductors
6. Characteristics
Table 6.
BUK963R2-40B
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
D
S
(BR)DSS
GS(th)
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
V
V
see
V
see
I
T
V
T
V
T
V
T
V
R
from drain lead 6 mm from package to
center of die; T
from upper edge of drain mounting base
to center of die; T
from source lead to source bond pad;
T
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
j
j
j
j
j
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
G(ext)
= 25 °C; see
= 25 °C; see
= 25 °C; T
= 25 °C; see
= 25 °C
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
Figure 10
Figure 10
Figure 10
Figure
Figure
= 40 V; V
= 40 V; V
= 30 V; R
= 15 V; V
= -15 V; V
= 10 V; I
= 4.5 V; I
= 5 V; I
= 5 V; I
= 0 V; V
= 0 V; V
= 0 V; V
= 10 Ω; T
Rev. 5 — 16 February 2011
11; see
11; see
D
D
DS
DS
DS
DS
DS
DS
DS
j
D
D
= 25 A; T
= 25 A; T
= 25 °C; see
GS
GS
DS
L
DS
= 25 A; T
= 32 V; V
j
= V
= V
= V
= 25 A; T
Figure 13
Figure 14
Figure 14
= 1.2 Ω; V
GS
GS
= 25 V; f = 1 MHz;
= 25 V; f = 1 MHz;
= 25 V; f = 1 MHz;
= 25 °C
j
= 0 V; T
= 0 V; T
= 0 V; T
= 25 °C
= 0 V; T
j
= 0 V; T
= 0 V; T
= 25 °C
GS
GS
GS
Figure 12
Figure 12
; T
; T
; T
j
j
= 175 °C;
= 25 °C;
j
j
j
j
GS
j
j
j
j
= 25 °C;
= 175 °C;
= -55 °C;
= 25 °C
j
= 25 °C
GS
= 25 °C
= 175 °C
= 25 °C
= 25 °C
j
j
Figure 14
= 5 V;
= -55 °C
= 25 °C
= 5 V;
N-channel TrenchMOS logic level FET
BUK963R2-40B
Min
36
40
1.1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
0.02
-
2
2
2.4
-
-
2.7
94
17
37
7877
1397
608
68
268
257
192
4.5
2.5
7.5
© NXP B.V. 2011. All rights reserved.
-
Max
-
-
2
-
2.3
1
500
100
100
2.8
3.5
6
3.2
-
-
-
10502 pF
1676
833
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
nC
nC
nC
pF
pF
ns
ns
ns
ns
nH
nH
nH
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