BUK7208-40B /T3 NXP Semiconductors, BUK7208-40B /T3 Datasheet - Page 11

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BUK7208-40B /T3

Manufacturer Part Number
BUK7208-40B /T3
Description
MOSFET HIGH PERF TRENCHMOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7208-40B /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
105 A
Resistance Drain-source Rds (on)
0.008 Ohms
Configuration
Single
Maximum Operating Temperature
+ 185 C
Mounting Style
SMD/SMT
Package / Case
SOT-428
Fall Time
51 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
167 W
Rise Time
104 ns
Factory Pack Quantity
2500
Typical Turn-off Delay Time
47 ns
Part # Aliases
BUK7208-40B,118
NXP Semiconductors
8. Revision history
Table 7.
BUK7208-40B
Product data sheet
Document ID
BUK7208-40B_3
Modifications:
BUK7208-40B_2
BUK7208-40B_1
Revision history
Release date
20100607
20040122
20021212
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data
Objective data
Rev. 03 — 7 June 2010
Change notice
-
-
-
N-channel TrenchMOS standard level FET
BUK7208-40B
-
Supersedes
BUK7208-40B_2
BUK7208-40B_1
© NXP B.V. 2010. All rights reserved.
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