BUK7208-40B /T3 NXP Semiconductors, BUK7208-40B /T3 Datasheet - Page 8

• Manufacturer Part Number: BUK7208-40B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7208-40B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 105 A
• Resistance Drain-source Rds (on): 0.008 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 185 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Fall Time: 51 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 167 W
• Rise Time: 104 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 47 ns
• Part # Aliases: BUK7208-40B,118

NXP Semiconductors
BUK7208-40B
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
D
100
75
50
25
20
15
10
0
5
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
6
6.5
100
2
7
T
j
= 185 ° C
8
200
4
Label is V
T
10
20
j
= 25 ° C
300
6
All information provided in this document is subject to legal disclaimers.
V
GS
I
D
GS
(A)
(V)
03nl39
03nl42
(V)
400
8
Rev. 03 — 7 June 2010
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
1.5
0.5
a
2
1
0
5
4
3
2
1
0
−60
−60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS standard level FET
10
10
BUK7208-40B
80
80
max
min
typ
150
150
© NXP B.V. 2010. All rights reserved.
T
T j (°C)
j
( ° C)
03no98
03np03
220
220
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