BUK7208-40B /T3 NXP Semiconductors, BUK7208-40B /T3 Datasheet - Page 9

• Manufacturer Part Number: BUK7208-40B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7208-40B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 105 A
• Resistance Drain-source Rds (on): 0.008 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 185 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Fall Time: 51 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 167 W
• Rise Time: 104 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 47 ns
• Part # Aliases: BUK7208-40B,118

NXP Semiconductors
BUK7208-40B
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
10
V
DD
= 14 V
20
(A)
I
S
100
75
50
25
V
0
30
DD
0
All information provided in this document is subject to legal disclaimers.
Q
= 32 V
G
(nC)
03nl37
40
0.3
Rev. 03 — 7 June 2010
T
T
j
= 185 °C
j
= 25 °C
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
3000
2000
1000
0.9
0
10
as a function of drain-source voltage; typical
values
−1
V
N-channel TrenchMOS standard level FET
SD
03nl36
(V)
1.2
1
C
C
C
rss
iss
oss
BUK7208-40B
10
V
© NXP B.V. 2010. All rights reserved.
DS
(V)
03nl43
10
2
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