BSN20 /T3 NXP Semiconductors, BSN20 /T3 Datasheet - Page 10

• Manufacturer Part Number: BSN20 /T3
• Description: MOSFET TRENCH 31V-99V G2 TAPE 13
• Manufacturer: NXP Semiconductors

Specifications of BSN20 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.173 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-236AB-3
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 830 mW
• Factory Pack Quantity: 10000
• Part # Aliases: BSN20,235

10. Revision history
Table 6:
Philips Semiconductors
9397 750 07213
Product specification
Rev Date
03
02
01
20000626
19970618
19901031
Revision history
CPCN
HZG303
-
-
Description
Product specification; third version; supersedes BSN20_2 of 970618.
Converted from VDMOS (Nijmegen) to TrenchMOS™ technology (Hazel Grove).
Product specification; second version.
Product specification; initial version.
Rev. 03 — 26 June 2000
N-channel enhancement mode field-effect transistor
© Philips Electronics N.V. 2000. All rights reserved.
BSN20
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