BSN20 /T3 NXP Semiconductors, BSN20 /T3 Datasheet - Page 2

• Manufacturer Part Number: BSN20 /T3
• Description: MOSFET TRENCH 31V-99V G2 TAPE 13
• Manufacturer: NXP Semiconductors

Specifications of BSN20 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.173 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-236AB-3
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 830 mW
• Factory Pack Quantity: 10000
• Part # Aliases: BSN20,235

5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors
9397 750 07213
Product specification
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
D
DM
S
SM
j
stg
j
DS
tot
DS
DGR
GS
tot
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source (diode forward) current (DC)
peak source (diode forward) current
Quick reference data
Limiting values
Conditions
T
T
T
V
V
Conditions
T
T
T
Figure 2
T
T
Figure 3
T
T
T
Rev. 03 — 26 June 2000
j
sp
sp
j
j
sp
sp
sp
sp
sp
sp
GS
GS
= 25 to 150 C
= 25 to 150 C
= 25 to 150 C; R
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 10 V; I
= 5 V; I
and
D
N-channel enhancement mode field-effect transistor
Figure 1
D
3
= 100 mA
GS
GS
= 100 mA
GS
= 10 V
= 10 V;
= 10 V;
GS
p
p
= 20 k
10 s;
10 s
Figure 2
Typ
2.8
3.8
Min
65
65
© Philips Electronics N.V. 2000. All rights reserved.
Max
50
173
0.83
150
15
20
Max
50
50
173
110
0.7
0.83
+150
+150
173
0.7
20
BSN20
Unit
V
mA
W
Unit
V
V
V
mA
mA
A
W
mA
A
C
C
C
2 of 13