BSN20 /T3 NXP Semiconductors, BSN20 /T3 Datasheet - Page 4

• Manufacturer Part Number: BSN20 /T3
• Description: MOSFET TRENCH 31V-99V G2 TAPE 13
• Manufacturer: NXP Semiconductors

Specifications of BSN20 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.173 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-236AB-3
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 830 mW
• Factory Pack Quantity: 10000
• Part # Aliases: BSN20,235

7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 07213
Product specification
Symbol
R
R
th(j-sp)
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to solder
point
thermal resistance from junction to ambient
7.1 Transient thermal impedance
Fig 4. Transient thermal impedance from junction to solder point as a function of
Mounted on a metal clad substrate.
Z th(j-sp)
(K/W)
pulse duration.
Rev. 03 — 26 June 2000
Conditions
mounted on a metal clad substrate;
Figure 4
mounted on a printed circuit board;
minimum footprint
N-channel enhancement mode field-effect transistor
© Philips Electronics N.V. 2000. All rights reserved.
P
t p
Value
150
350
T
=
BSN20
t p
T
t
03aa47
Unit
K/W
K/W
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