NDS9400A_D87Z Fairchild Semiconductor, NDS9400A_D87Z Datasheet - Page 4

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NDS9400A_D87Z

Manufacturer Part Number
NDS9400A_D87Z
Description
MOSFET Single P-Ch FET Enhancement Mode
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDS9400A_D87Z

Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.4 A
Resistance Drain-source Rds (on)
0.13 Ohms
Configuration
Single Quad Drain Triple Source
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
8 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
2.5 W
Rise Time
21 ns
Typical Turn-off Delay Time
21 ns
Typical Electrical Characteristics
-10
-8
-6
-4
-2
0
-20
-15
-10
1.6
1.4
1.2
0.8
0.6
-1
-5
0
1
Figure 3. On-Resistance Variation with
Figure 5. Transfer Characteristics.
-50
0
Figure 1. On-Region Characteristics.
V
DS
Temperature.
-25
V
= -10V
I
D
G S
-2
= -3.4A
-1
= -10V
V
GS
0
V
T , JUNCTION TEMPERATURE (°C)
V
DS
J
, GATE TO SOURCE VOLTAGE (V)
GS
, DRAIN-SOURCE VOLTAGE (V)
= -10V
2 5
-3
-2
T = -55°C
J
5 0
-8.0
-7.0
-4
-3
7 5
-6.0
25°C
-5.5
100
-5.0
-4.5
-5
125°C
-4
-4.0
-3.5
125
-3.0
150
-6
-5
1.2
1.1
0.9
0.8
0.7
1.5
0.5
2.5
1.5
0.5
1
2
1
Figure 4. On-Resistance Variation with Drain
Figure 6. Gate Threshold Variation with
Figure 2. On-Resistance Variation with Gate
-50
3
2
1
0
0
V
V
Current and Temperature.
Temperature.
GS
Voltage and Drain Current.
-25
GS
= -10V
= -3.5V
-3
-3
0
T , JUNCTION TEMPERATURE (°C)
J
-4.0
I
I
D
D
2 5
, DRAIN CURRENT (A)
, DRAIN CURRENT (A)
-6
-6
-4.5
5 0
T = 125°C
-9
-9
J
-5.0
7 5
-5.5
I
100
V
D
DS
25°C
= -250µA
-12
-6.0
-12
= V
-7.0
-55°C
-8.0
GS
125
NDS9400A.SAM
-10
150
-15
-15

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