SI7407DN-T1 Vishay/Siliconix, SI7407DN-T1 Datasheet
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SI7407DN-T1
Specifications of SI7407DN-T1
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SI7407DN-T1 Summary of contents
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... Bottom View Ordering Information: Si7407DN-T1 Si7407DN-T1-E3 (Lead (Pb)-free) Si7407DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...
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... Si7407DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...
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... Source-Drain Diode Forward Voltage Document Number: 71912 S-80581-Rev. D, 17-Mar- °C, unless otherwise noted A 5000 4000 3000 2000 1000 °C J 0.8 1.0 1.2 Si7407DN Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1.2 1.1 1.0 ...
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... Si7407DN Vishay Siliconix TYPICAL CHARACTERISTICS T 0.4 0.3 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com °C, unless otherwise noted 250 µ 100 125 150 100 Limited by R ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71912. Document Number: 71912 S-80581-Rev. D, 17-Mar- °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7407DN Vishay Siliconix - www.vishay.com 5 ...
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PowerPAK 1212-8, (SINGLE/DUAL Notes: 1. Inch will govern 2 Dimensions exclusive of mold gate burrs 3. Dimensions exclusive of mold flash and cutting burrs DIM. MIN. A 0.97 A1 0.00 b ...
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... To take the advantage of the single PowerPAK 1212-8’s thermal performance see Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 single in the index of this document. In this figure, the drain land pattern is given to make full contact to the drain pad on the PowerPAK package ...
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... Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this doc- ument. The gap between the two drain pads is 10 mils. This matches the spacing of the two drain pads on the Pow- erPAK 1212-8 dual package ...
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TABLE 1: EQIVALENT STEADY STATE PERFORMANCE Package Configuration Single Thermal Resiatance R (C/W) thJC PowerPAK 1212 49.8 °C 2.4 °C/W PC Board at 45 °C THERMAL PERFORMANCE Introduction A basic measure of a device’s thermal performance is the junction-to-case thermal ...
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AN822 Vishay Siliconix 105 Spreading Copper (sq. in 100 % 0.00 0.25 0.50 0.75 1.00 Figure 5. Spreading Copper - Si7401DN CONCLUSIONS As a derivative of the PowerPAK SO-8, the PowerPAK 1212-8 ...
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RECOMMENDED MINIMUM PADS FOR PowerPAK 0.039 (0.990) 0.016 (0.405) 0.026 (0.660) Return to Index Return to Index Document Number: 72597 Revision: 21-Jan-08 Application Note 826 ® 1212-8 Single 0.152 (3.860) 0.068 (1.725) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...