SI3588DV-T1 Vishay/Siliconix, SI3588DV-T1 Datasheet - Page 4

• Manufacturer Part Number: SI3588DV-T1
• Description: MOSFET 20V 3.0/2.2A
• Manufacturer: Vishay/Siliconix

Specifications of SI3588DV-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.5 A, 0.57 A
• Resistance Drain-source Rds (on): 0.08 Ohms, 0.145 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Fall Time: 30 ns at N Channel, 29 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 830 mW
• Rise Time: 30 ns at N Channel, 29 ns at P Channel
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 28 ns at N Channel, 24 ns at P Channel

Si3588DV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.01
- 0.1
- 0.2
- 0.3
- 0.4
0.1
0.2
0.1
0.0
0.1
10
1
2
1
- 50
0.00
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
Source-Drain Diode Forward Voltage
0.2
V
0
T
SD
J
I
Threshold Voltage
D
T
= 150 °C
10
0.4
- Source-to-Drain Voltage (V)
J
= 250 µA
-3
- Temperature (°C)
25
Single Pulse
50
0.6
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
10
T
J
-2
100
= 25 °C
1.0
125
1.2
150
Square Wave Pulse Duration (s)
10
-1
1
0.30
0.25
0.20
0.15
0.10
0.05
0.00
8
6
4
2
0
0.01
0
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
V
DM
GS
JM
0.1
- Gate-to-Source Voltage (V)
- T
A
t
1
= P
Time (s)
2
t
I
2
DM
D
S09-2275-Rev. B, 02-Nov-09
= 3.0 A
Z
thJA
Document Number: 71332
thJA
100
(t)
t
t
1
2
1
= 130 °C/W
3
4
600
10
30
5