SI3588DV-T1 Vishay/Siliconix, SI3588DV-T1 Datasheet - Page 5
![no-image](/images/no-image-200.jpg)
SI3588DV-T1
Manufacturer Part Number
SI3588DV-T1
Description
MOSFET 20V 3.0/2.2A
Manufacturer
Vishay/Siliconix
Datasheet
1.SI3588DV-T1.pdf
(12 pages)
Specifications of SI3588DV-T1
Product Category
MOSFET
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
+/- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.5 A, 0.57 A
Resistance Drain-source Rds (on)
0.08 Ohms, 0.145 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP-6
Fall Time
30 ns at N Channel, 29 ns at P Channel
Minimum Operating Temperature
- 55 C
Power Dissipation
830 mW
Rise Time
30 ns at N Channel, 29 ns at P Channel
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
28 ns at N Channel, 24 ns at P Channel
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3588DV-T1-E3
Manufacturer:
VISHAY
Quantity:
118
Part Number:
SI3588DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI3588DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71332
S09-2275-Rev. B, 02-Nov-09
0.01
0.1
0.75
0.60
0.45
0.30
0.15
0.00
2
1
10
8
6
4
2
0
-4
0
0
0.02
V
Duty Cycle = 0.5
0.2
0.1
0.05
GS
= 1.8 V
On-Resistance vs. Drain Current
1
Single Pulse
V
DS
Output Characteristics
2
- Drain-to-Source Voltage (V)
V
I
D
GS
- Drain Current (A)
V
2
10
GS
= 2.5 V
-3
= 4.5 V thru 2.5 V
4
3
Normalized Thermal Transient Impedance, Junction-to-Foot
2 V
V
GS
6
1.5 V
= 4.5 V
4
10
-2
Square Wave Pulse Duration (s)
5
8
10
-1
600
500
400
300
200
100
10
8
6
4
2
0
0
0.0
0
C
rss
0.5
4
V
V
C
DS
GS
Transfer Characteristics
1.0
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
1
Capacitance
8
1.5
T
25 °C
C
C
iss
= - 55 °C
Vishay Siliconix
2.0
12
Si3588DV
2.5
125 °C
www.vishay.com
16
10
3.0
3.5
20
5