SI3588DV-T1 Vishay/Siliconix, SI3588DV-T1 Datasheet - Page 5

• Manufacturer Part Number: SI3588DV-T1
• Description: MOSFET 20V 3.0/2.2A
• Manufacturer: Vishay/Siliconix

Specifications of SI3588DV-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.5 A, 0.57 A
• Resistance Drain-source Rds (on): 0.08 Ohms, 0.145 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Fall Time: 30 ns at N Channel, 29 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 830 mW
• Rise Time: 30 ns at N Channel, 29 ns at P Channel
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 28 ns at N Channel, 24 ns at P Channel

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71332
S09-2275-Rev. B, 02-Nov-09
0.01
0.1
0.75
0.60
0.45
0.30
0.15
0.00
2
1
10
8
6
4
2
0
-4
0
0
0.02
V
Duty Cycle = 0.5
0.2
0.1
0.05
GS
= 1.8 V
On-Resistance vs. Drain Current
1
Single Pulse
V
DS
Output Characteristics
2
- Drain-to-Source Voltage (V)
V
I
D
GS
- Drain Current (A)
V
2
10
GS
= 2.5 V
-3
= 4.5 V thru 2.5 V
4
3
Normalized Thermal Transient Impedance, Junction-to-Foot
2 V
V
GS
6
1.5 V
= 4.5 V
4
10
-2
Square Wave Pulse Duration (s)
5
8
10
-1
600
500
400
300
200
100
10
8
6
4
2
0
0
0.0
0
C
rss
0.5
4
V
V
C
DS
GS
Transfer Characteristics
1.0
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
1
Capacitance
8
1.5
T
25 °C
C
C
iss
= - 55 °C
Vishay Siliconix
2.0
12
Si3588DV
2.5
125 °C
www.vishay.com
16
10
3.0
3.5
20
5