SI3588DV-T1 Vishay/Siliconix, SI3588DV-T1 Datasheet - Page 7

• Manufacturer Part Number: SI3588DV-T1
• Description: MOSFET 20V 3.0/2.2A
• Manufacturer: Vishay/Siliconix

Specifications of SI3588DV-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.5 A, 0.57 A
• Resistance Drain-source Rds (on): 0.08 Ohms, 0.145 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Fall Time: 30 ns at N Channel, 29 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 830 mW
• Rise Time: 30 ns at N Channel, 29 ns at P Channel
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 28 ns at N Channel, 24 ns at P Channel

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71332.
Document Number: 71332
S09-2275-Rev. B, 02-Nov-09
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
10
-2
Square Wave Pulse Duration (s)
10
-1
10
1
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
- T
A
t
1
1
= P
t
DM
2
Z
Vishay Siliconix
thJA
thJA
100
(t)
t
t
1
2
= 130 °C/W
Si3588DV
www.vishay.com
600
10
7