SI3588DV-T1 Vishay/Siliconix, SI3588DV-T1 Datasheet - Page 6
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SI3588DV-T1
Manufacturer Part Number
SI3588DV-T1
Description
MOSFET 20V 3.0/2.2A
Manufacturer
Vishay/Siliconix
Datasheet
1.SI3588DV-T1.pdf
(12 pages)
Specifications of SI3588DV-T1
Product Category
MOSFET
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
+/- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.5 A, 0.57 A
Resistance Drain-source Rds (on)
0.08 Ohms, 0.145 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP-6
Fall Time
30 ns at N Channel, 29 ns at P Channel
Minimum Operating Temperature
- 55 C
Power Dissipation
830 mW
Rise Time
30 ns at N Channel, 29 ns at P Channel
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
28 ns at N Channel, 24 ns at P Channel
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3588DV-T1-E3
Manufacturer:
VISHAY
Quantity:
118
Part Number:
SI3588DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI3588DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si3588DV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
- 0.1
- 0.2
0.1
0.4
0.3
0.2
0.1
0.0
10
1
5
4
3
2
1
0
- 50
0.00
0
- 25
V
I
D
Source-Drain Diode Forward Voltage
DS
= 2.2 A
T
0.3
= 10 V
1
J
V
= 150 °C
SD
0
Q
I
Threshold Voltage
T
- Source-to-Drain Voltage (V)
D
g
J
= 250 µA
- Total Gate Charge (nC)
- Temperature (°C)
25
Gate Charge
0.6
2
50
T
J
0.9
3
= 25 °C
75
100
1.2
4
125
1.5
150
5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
- 50
0.01
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
- 25
V
I
D
GS
= 2.2 A
= 4.5 V
1
V
T
0
GS
J
0.1
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
2
Time (s)
S09-2275-Rev. B, 02-Nov-09
50
I
D
Document Number: 71332
= 2.2 A
1
3
75
100
4
125
10
150
30
5