SI3588DV-T1 Vishay/Siliconix, SI3588DV-T1 Datasheet - Page 6

• Manufacturer Part Number: SI3588DV-T1
• Description: MOSFET 20V 3.0/2.2A
• Manufacturer: Vishay/Siliconix

Specifications of SI3588DV-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.5 A, 0.57 A
• Resistance Drain-source Rds (on): 0.08 Ohms, 0.145 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Fall Time: 30 ns at N Channel, 29 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 830 mW
• Rise Time: 30 ns at N Channel, 29 ns at P Channel
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 28 ns at N Channel, 24 ns at P Channel

Si3588DV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
- 0.1
- 0.2
0.1
0.4
0.3
0.2
0.1
0.0
10
1
5
4
3
2
1
0
- 50
0.00
0
- 25
V
I
D
Source-Drain Diode Forward Voltage
DS
= 2.2 A
T
0.3
= 10 V
1
J
V
= 150 °C
SD
0
Q
I
Threshold Voltage
T
- Source-to-Drain Voltage (V)
D
g
J
= 250 µA
- Total Gate Charge (nC)
- Temperature (°C)
25
Gate Charge
0.6
2
50
T
J
0.9
3
= 25 °C
75
100
1.2
4
125
1.5
150
5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
- 50
0.01
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
- 25
V
I
D
GS
= 2.2 A
= 4.5 V
1
V
T
0
GS
J
0.1
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
2
Time (s)
S09-2275-Rev. B, 02-Nov-09
50
I
D
Document Number: 71332
= 2.2 A
1
3
75
100
4
125
10
150
30
5