BC857AT T/R NXP Semiconductors, BC857AT T/R Datasheet - Page 5
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BC857AT T/R
Manufacturer Part Number
BC857AT T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BC857AT_TR.pdf
(9 pages)
Specifications of BC857AT T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
125 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-416
Continuous Collector Current
0.1 A
Maximum Power Dissipation
150 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BC857AT,115
NXP Semiconductors
GRAPHICAL INFORMATION BC857BT
2000 Nov 15
handbook, halfpage
handbook, halfpage
PNP general purpose transistors
V CEsat
V
(1) T
(2) T
(3) T
I
(1) T
(2) T
(3) T
Fig.8
C
h FE
(mV)
CE
/I
1000
−10
−10
−10
B
800
600
400
200
−10
= −5 V.
= 20.
−10
−10
amb
amb
amb
amb
amb
amb
0
4
3
2
Fig.6 DC current gain; typical values.
−2
−1
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
−1
−1
(1)
(3)
(2)
−1
(1)
(2)
(3)
−10
−10
−10
−10
2
I C (mA)
I C (mA)
2
MGT715
MGT717
−10
−10
3
3
5
handbook, halfpage
(mV)
V BE
V
(1) T
(2) T
(3) T
Fig.7
I
(1) T
(2) T
(3) T
Fig.9
handbook, halfpage
V BEsat
C
CE
/I
(mV)
−1000
B
−1200
−800
−600
−400
−200
= −5 V.
= 20.
−1200
−1000
amb
amb
amb
amb
amb
amb
−800
−600
−400
−200
−10
0
−10
= −55 °C.
= 25 °C.
= 150 °C.
= −55 °C.
= 25 °C.
= 150 °C.
Base-emitter voltage as a function of
collector current; typical values.
Base-emitter saturation voltage as a
function of collector current; typical values.
0
−2
−1
−10
BC856T; BC857T series
−1
−1
(1)
(2)
(3)
−1
(1)
(2)
(3)
−10
−10
Product data sheet
−10
−10
2
I C (mA)
2
I C (mA)
MGT716
MGT718
−10
−10
3
3