BC857AT T/R NXP Semiconductors, BC857AT T/R Datasheet - Page 7
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BC857AT T/R
Manufacturer Part Number
BC857AT T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BC857AT_TR.pdf
(9 pages)
Specifications of BC857AT T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
125 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-416
Continuous Collector Current
0.1 A
Maximum Power Dissipation
150 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BC857AT,115
NXP Semiconductors
PACKAGE OUTLINE
2000 Nov 15
Plastic surface mounted package; 3 leads
PNP general purpose transistors
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT416
0.95
0.60
A
max
0.1
A 1
1
0.30
0.15
b p
IEC
e 1
0.25
0.10
c
D
e
1.8
1.4
b p
3
D
JEDEC
0.9
0.7
E
2
REFERENCES
e
1
w
0
B
M
B
0.5
e
1
SC-75
scale
EIAJ
0.5
v
7
1.75
1.45
M
H
E
A
0.45
0.15
1 mm
L
p
A
A 1
0.23
0.13
Q
H E
BC856T; BC857T series
0.2
E
v
detail X
0.2
PROJECTION
w
EUROPEAN
L p
A
Q
c
Product data sheet
X
ISSUE DATE
97-02-28
SOT416