BC857AT T/R NXP Semiconductors, BC857AT T/R Datasheet - Page 9
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BC857AT T/R
Manufacturer Part Number
BC857AT T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BC857AT_TR.pdf
(9 pages)
Specifications of BC857AT T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
125 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-416
Continuous Collector Current
0.1 A
Maximum Power Dissipation
150 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BC857AT,115
Printed in The Netherlands
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
613514/03/pp9
Date of release: 2000 Nov 15
Document order number: 9397 750 07525