MT48LC4M32B2P-7:G Micron Technology Inc, MT48LC4M32B2P-7:G Datasheet - Page 12

IC SDRAM 128MBIT 143MHZ 86TSOP

MT48LC4M32B2P-7:G

Manufacturer Part Number
MT48LC4M32B2P-7:G
Description
IC SDRAM 128MBIT 143MHZ 86TSOP
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48LC4M32B2P-7:G

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
128M (4Mx32)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TSOPII
Organization
4Mx32
Density
128Mb
Address Bus
14b
Access Time (max)
17/8/5.5ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
175mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Register Definition
Mode Register
Burst Length (BL)
PDF: 09005aef80872800/Source: 09005aef80863355
128MbSDRAMx32_2.fm - Rev. L 1/09 EN
Note:
10. Issue an AUTO REFRESH command.
11. Wait at least
12. The SDRAM is now ready for mode register programming. Because the mode register
13. Wait at least
7. Wait at least
8. Issue an AUTO REFRESH command.
9. Wait at least
At this point the DRAM is ready for any valid command.
The mode register is used to define the specific mode of operation of the SDRAM. This
definition includes the selection of a burst length (BL), a burst type, a CAS latency (CL),
an operating mode and a write burst mode, as shown in Figure 4 on page 13. The mode
register is programmed via the LOAD MODE REGISTER command and will retain the
stored information until it is programmed again or the device loses power.
Mode register bits M0–M2 specify the, M3 specifies the type of burst (sequential or inter-
leaved), M4–M6 specify the CL, M7 and M8 specify the operating mode, M9 specifies the
write burst mode, and M10, M11, BA0, and BA1 are reserved for future use.
The mode register must be loaded when all banks are idle, and the controller must wait
the specified time before initiating the subsequent operation. Violating either of these
requirements will result in unspecified operation.
Read and write accesses to the SDRAM are burst oriented, with BL being programmable,
as shown in Figure 4 on page 13. The BL determines the maximum number of column
locations that can be accessed for a given READ or WRITE command. Burst lengths of 1,
2, 4, or 8 locations are available for both the sequential and the interleaved burst types,
and a full-page burst is available for the sequential type. The full-page burst is used in
conjunction with the BURST TERMINATE command to generate arbitrary BLs.
All banks will complete their precharge, thereby placing the device in the all banks
idle state.
are allowed.
are allowed.
will power up in an unknown state, it should be loaded with desired bit values prior to
applying any operational command. Using the LMR command, program the mode
register. The mode register is programmed via the MODE REGISTER SET command
with BA1 = 0, BA0 = 0 and retains the stored information until it is programmed again
or the device loses power. Not programming the mode register upon initialization will
result in default settings which may not be desired. Outputs are guaranteed High-Z
after the LMR command is issued. Outputs should be High-Z already before the LMR
command is issued.
allowed.
If desired, more than two AUTO REFRESH commands can be issued in the sequence.
After steps 9 and 10 are complete, repeat them until the desired number of AUTO
REFRESH +
t
t
t
t
t
RFC loops is achieved.
RP time, during this time NOPs or DESELECT commands must be given.
RFC time, during which only NOPs or COMMAND INHIBIT commands
RFC time, during which only NOPs or COMMAND INHIBIT commands
MRD time, during which only NOP or DESELECT commands are
12
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001 Micron Technology, Inc. All rights reserved.
128Mb: x32 SDRAM
Register Definition

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